▎ 摘　　要

NOVELTY - The graphene device includes a third electrode layer (18) which is formed on a second portion of a graphene layer (15). A gate electrode layer (17) is formed on a gate insulation layer (16). The gate insulation layer is formed on the first area of the graphene layer. The graphene layer is formed on a second insulation layer (14) formed on an information store layer (13). The information store layer is formed on a first insulation layer (12) formed on a first electrode (11). USE - Graphene device. ADVANTAGE - The graphene device can be operated in low operating voltage hence the reliability of the graphene device is high. The graphene device can be provided with carrying of multi-level property. The graphene device can carry the multi-level property in low operating voltage, by use of synapse circuit configuration. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene device. First electrode (11) First insulation layer (12) Information store layer (13) Second insulation layer (14) Graphene layer (15) Gate insulation layer (16) Gate electrode layer (17) Third electrode layer (18)