• 专利标题:   Method for manufacturing thin film device, involves forming outermost substrate layer on base layer, and irradiating outermost substrate layer with laser to form graphene structure on surface of substrate layer to obtain thin film device.
  • 专利号:   CN110953982-A
  • 发明人:   FENG X, DU Q, CHEN Y
  • 专利权人:   INST FLEXIBLE ELECTRONICS TECHNOLOGY THU, UNIV TSINGHUA
  • 国际专利分类:   G01B007/16
  • 专利详细信息:   CN110953982-A 03 Apr 2020 G01B-007/16 202031 Pages: 15 Chinese
  • 申请详细信息:   CN110953982-A CN11324401 20 Dec 2019
  • 优先权号:   CN11324401

▎ 摘  要

NOVELTY - The method involves providing first mixed solution containing a repairing material and a second mixed solution containing a matrix material. The first mixed solution and the second mixed solution are sequentially coated on a surface of a carrier. A thin film layer is obtained, where sum of coating times of the first mixed solution and the second mixed solution is an even number of times. The thin film layer is provided with a repair layer and a base layer that are alternately stacked with each other. An outermost substrate layer is formed on the base layer far away from the carrier. The outermost substrate layer is irradiated with a laser to form a graphene structure on the surface of the outermost substrate layer to obtain a thin film device. USE - Method for manufacturing a thin film device (claimed). ADVANTAGE - The method enables improving strain performance and electrical conductivity of the thin film device and a flexible strain sensor. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a flexible strain sensor manufacturing method; and (2) a flexible strain sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a thin film device.