▎ 摘　　要

NOVELTY - The device has a gallium nitride substrate layer whose upper side is fixed with a graphene layer. An upper side of the graphene layer is fixed with a superconducting thin film layer. A titanium film layer is fixed between the graphene layer and the superconducting thin film layer. The superconducting thin film layer is provided with a lower side electronic superconducting thin film layer and an upper side electronic superconductive film layer, where the lower side electronic superconducting thin film layer is made up of gold or palladium material. USE - Gallium nitride-based graphene TES superconducting device. ADVANTAGE - The device is simple to process, and obtains higher thermal coupling coefficient, and reduces recovering time, and increases response speed, and determines heat radiation rate of a phonon coupling material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a gallium nitride-base graphene TES superconducting device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a gallium nitride-based graphene TES superconducting device manufacturing. '(Drawing includes non-English language text)'