• 专利标题:   Analyzing physical shape of graphene, comprises preparing silicon substrate having fine grooves, preparing specimen by forming graphene and metal coating film on silicon substrate, and observing specimen in scanning electron microscope.
  • 专利号:   KR2020116747-A
  • 发明人:   HUN H S, CHOI K, AN W, KIM S T, LEE M, KIM H G
  • 专利权人:   KOREA INST CERAMIC ENG TECHNOLOGY
  • 国际专利分类:   G01B015/02, G01B015/04, G01B015/08, G01N023/2251
  • 专利详细信息:   KR2020116747-A 13 Oct 2020 G01N-023/2251 202085 Pages: 11
  • 申请详细信息:   KR2020116747-A KR038553 02 Apr 2019
  • 优先权号:   KR038553

▎ 摘  要

NOVELTY - Analyzing physical shape of graphene, comprises (1) preparing a silicon substrate having fine grooves, (2) preparing a specimen by sequentially forming graphene and a metal coating film on the silicon substrate, and (3) mounting the specimen in a scanning electron microscope (SEM) holder, and observing using SEM. USE - The method is useful for analyzing physical shape of graphene. ADVANTAGE - The method individually observes degree of wrinkle, flatness, and adhesion in a curved state of graphene, and obtains information on the three-dimensional deformability of graphene by observing the graphene in a form in which some graphene is attached to a silicon substrate and the other part is bent. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for analyzing physical shape of graphene (Drawing includes non-English language text).