▎ 摘　　要

NOVELTY - The device (1000) has a channel layer (110) that is formed on a substrate (100) and made of a two-dimensional material, and a source and a drain are located on both ends of the channel layer. A tunneling insulating layer (130) is formed on the channel film, and has a dielectric constant. A floating gate (140) is arranged on the tunnel insulating film, which is made of the two dimensional material. An upper gate (160) is placed on the blocking insulating layers (150), which has a thickness greater than that of the tunnel layer. The tunneling insulating layer includes aluminum oxide, zirconium dioxide, hafnium oxide, tantalum pentoxide, and hexagonal boron nitride. The channel film includes one of molybdenum disulphide, molybdenum diselenide, tungsten diselenide, and tungsten disulphide, and the floating gate includes graphene, graphene oxide, carbon nanotube, and molysulfonate. USE - Flash memory device used in neuromorphic computing system. ADVANTAGE - The nonlinearity of the synaptic weight is improved by improving the tunneling effect. The spiking neural network (SNN)-based neuromorphic computing system is implemented by emulating spike-timing-dependent plasticity in the floating memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a flash memory device. 100Substrate 110Channel layer 130Tunneling insulating layer 140Floating gate 150Blocking insulating layer 160Upper gate 1000Flash memory device