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  • 专利标题:   Atmospheric pressure chemical vapor deposition of graphene to form graphene film, involves cleaning copper foil substrate, annealing, forming graphene crystal domains on substrate, nucleating, melting to form graphene film, and cooling.
  • 专利号:   CN104498902-A, CN104498902-B
  • 发明人:   GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D
  • 专利权人:   CHONGQING MOXI TECHNOLOGY CO LTD, CHINESE ACAD SCI CHONGQING GREEN INTEL, CHONGQING GRAPHENE TECH CO LTD
  • 国际专利分类:   C23C016/26, C23C016/453
  • 专利详细信息:   CN104498902-A 08 Apr 2015 C23C-016/453 201543 Pages: 9 Chinese
  • 申请详细信息:   CN104498902-A CN10766927 12 Dec 2014
  • 优先权号:   CN10766927

▎ 摘　　要

NOVELTY - Atmospheric pressure chemical vapor deposition of graphene to form graphene film, involves cleaning copper foil substrate and then annealing, forming crystal domains of graphene on the copper foil substrate and then nucleating, inerting, melting crystal domains of graphene to form graphene film, and cooling graphene film. USE - Atmospheric pressure chemical vapor deposition of graphene to form graphene film (claimed). ADVANTAGE - The method enables simple and convenient atmospheric pressure chemical vapor deposition of graphene to form graphene film with improved quality. The crystal domains of graphene have high density and adjustable size.