▎ 摘　　要

NOVELTY - The transistor has its channel region formed of a bi-layer graphene film (103). The gate electrode (105) to which an electric field is applied is formed in a direction orthogonal to the channel region. USE - Semiconductor device e.g. transistor (claimed). ADVANTAGE - The transistor exhibits excellent operating characteristics, as graphene film is used for the channel of the transistor. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) semiconductor device manufacturing method; and (2) transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structure of the graphene transistor. (Drawing includes non-English language text) Substrate (101) Insulation layer (102) Bi-layer graphene film (103) Gate insulation film (104) Gate electrode (105)