• 专利标题:   Crystal silicon solar energy battery structure, has silicon substrate chip whose frontage is sequentially coated with anti-reflection film and graphene electric conduction film, and aluminum back surface arranged with silicon substrate chip.
  • 专利号:   CN204289471-U
  • 发明人:   GOU X, FAN W, HUANG Q, ZHOU S, HUANG J
  • 专利权人:   CHINA ENERGYSAVING SOLAR TECHNOLOGY CO
  • 国际专利分类:   H01L031/02, H01L031/0224
  • 专利详细信息:   CN204289471-U 22 Apr 2015 H01L-031/0224 201546 Pages: 5 Chinese
  • 申请详细信息:   CN204289471-U CN20687743 18 Nov 2014
  • 优先权号:   CN20687743

▎ 摘  要

NOVELTY - The utility model claims a crystal silicon solar energy battery structure,comprising a silicon chip substrate, a reflection film, graphite electric conduction film, a., aluminum back field and the back electrode, the electrode and the back electrode a. directly sintering in turn cover cover on silicon substrate chip frontage of a silicon chip substrate, the aluminum back surface opposite face in the frontage of silicon substrate chip and opposite face, a reflection reducing film and graphene electric conduction film, the utility model is new type of graphite electric conduction film collect a frontage, and with a high transmission rate in a wide wave length range in, the carrier migration rate, a shielding and good conductivity, a. increase a chip efficiency, at the same time with a excellent dynamic performance and stability.