▎ 摘　　要

NOVELTY - The crystalline structure comprises a graphene layer (30) that includes at least one graphene monolayer. The graphene layer is located directly on a crystallographic surface having non-hexagonal symmetry, the surface being a surface of a crystalline semiconductor carbide layer. The carbide layer is a single crystalline silicon carbide in beta phase having zinc blende structure, or a polycrystalline silicon carbide layer having crystal grains in beta phase having zinc blende structure, with the single crystalline semiconductor layer being a single crystalline silicon layer. USE - Crystalline structure for silicon carbide layer. ADVANTAGE - Enables the provision of a graphene layer on a commercially available semiconductor substrate having a diameter of 200 or 300 millimeters, since the carbon concentration on the surface of the semiconductor-carbon alloy layer increases as semiconductor atoms are selectively removed, thus the remaining carbon atoms can coalesce to form the graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows the vertical cross-sectional view of a structure after formation of a graphene layer. Semiconductor substrate (10) Crystalline semiconductor carbon alloy layer (20) Top surface (21) Graphene layer (30)