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  • 专利标题:   Graphene quantum dot for light-emitting structure of semiconductor light emitting device, comprises graphene core having functional group adhered to edge portion of graphene and shell chemically combined with functional group.
  • 专利号:   KR2012114464-A
  • 发明人:   HWANG S W, YOO K H, KO G W, CHUNG H J, SONE C S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C09K011/00, C09K011/02
  • 专利详细信息:   KR2012114464-A 17 Oct 2012 C09K-011/00 201311 Pages: 12
  • 申请详细信息:   KR2012114464-A KR031972 07 Apr 2011
  • 优先权号:   KR031972

▎ 摘　　要

NOVELTY - A graphene quantum dot includes graphene core having a functional group adhered to edge portion of the graphene and shell chemically combined with the functional group while surrounding the graphene core. USE - Graphene quantum dot is used for light-emitting structure of semiconductor light emitting device (claimed). ADVANTAGE - The graphene quantum dot has high brightness and plasmon effect. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of graphene quantum dot; and (2) semiconductor light emitting device.