• 专利标题:   Growing copper-based multilayer graphene comprises e.g. pre-treating copper foil substrate and placing into the support, coating with metal foil on the outside of the support, annealing, reacting and cooling.
  • 专利号:   CN108706574-A
  • 发明人:   HUANG M, LI L, QU X
  • 专利权人:   WUXI HUICHENG GRAPHENE TECHNOLOGY APPL
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN108706574-A 26 Oct 2018 C01B-032/186 201882 Pages: 7 Chinese
  • 申请详细信息:   CN108706574-A CN10759667 11 Jul 2018
  • 优先权号:   CN10759667

▎ 摘  要

NOVELTY - Growing copper-based multilayer graphene comprises (i) pre-treating copper foil substrate and placing into the support, (ii) coating with metal foil on the outside of the support, (iii) placing the above-mentioned metal foil-clad stent into a vacuum system and annealing, and (iv) reacting with carbon-containing gas for 30-60 minutes, cooling and forming multilayer on the surface of the copper foil. USE - The method is useful for growing copper-based multilayer graphene. ADVANTAGE - The method: is simple and safe; has fast growth rate; improves the catalytic decomposition efficiency; increases the concentration of carbon atoms; has no additional energy consumption; can form high quality; and has high multi-layer graphene.