• 专利标题:   Preparing graphene oxide-grafted-barium titanate/polyvinylidene fluoride composite film useful in dielectric thin film material field, comprises e.g. contacting graphene oxide by 3-aminophenoxyphthalonitrile and subjecting mixed solution containing polyvinylidene fluoride to film-forming treatment.
  • 专利号:   CN116003845-A
  • 发明人:   LIN H, DI H, SONG Y, SUN J, XIAO Q
  • 专利权人:   TUNGHSU GROUP CO LTD, TUNGHSU TECHNOLOGY GROUP CO LTD, CHENGDU ZHONGPU GRAPHENE APPL TECHNOLOGY CO LTD
  • 国际专利分类:   C08J005/18, C08K003/04, C08K009/02, C08K009/04, C08L027/16
  • 专利详细信息:   CN116003845-A 25 Apr 2023 C08J-005/18 202345 Chinese
  • 申请详细信息:   CN116003845-A CN11715199 28 Dec 2022
  • 优先权号:   CN11715199

▎ 摘  要

NOVELTY - Preparing graphene oxide-grafted-barium titanate/polyvinylidene fluoride (GO-g-BT/PVDF) composite film comprises (i) subjecting GO-isophorone diisocyanate (IPDI) and 3-amino-phenoxyphthalonitrile for the first contact to obtain GO-cyanide (CN); (ii) under the presence of a catalyst, subjecting the cyanation barium titanate and GO-CN for the second contact reaction to obtain GO-g-BT filler, where the dosage weight ratio of GO-CN and cyanation barium titanate is 1:8-12; (iii) subjecting the mixed solution containing polyvinylidene fluoride and GO-g-BT filler to film-forming treatment to obtain GO-g- BT/PVDF composite film and the weight ratio of GO-g-BT filler and polyvinylidene fluoride is 1:1-6. USE - The graphene oxide-grafted-barium titanate/polyvinylidene fluoride (GO-g-BT/PVDF) composite film is useful in useful in dielectric thin film material field, and wear-resistant electronic, photoelectric smart sensing, embedded capacitor, electric stress control and large power storage device. ADVANTAGE - The composite film: has high dielectric constant, energy storage density and breakdown strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene oxide-grafted-barium titanate/polyvinylidene fluoride (GO-g-BT/PVDF) composite film, is prepared by the above method.