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  • 专利标题:   Forming method of semiconductor device, involves covering top surface of semiconductor layer by graphene layer.
  • 专利号:   CN106935481-A
  • 发明人:   ZHANG H
  • 专利权人:   SEMICONDUCTOR MFG INT SHANGHAI CORP, SEMICONDUCTOR MFG INT BEIJING CORP
  • 国际专利分类:   G02B006/13, H01L021/02
  • 专利详细信息:   CN106935481-A 07 Jul 2017 H01L-021/02 201758 Pages: 15 Chinese
  • 申请详细信息:   CN106935481-A CN11025332 30 Dec 2015
  • 优先权号:   CN11025332

▎ 摘　　要

NOVELTY - The method involves providing a substrate on which multiple separate semiconductor layer (211) whose cross section is trapezoidal is formed. A graphene layer covers the top surface of the semiconductor layer. USE - Forming method of semiconductor device. ADVANTAGE - The semiconductor device inhibits dissipation of light wave in the semiconductor layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the forming method of semiconductor device. Insulating layer (201) Semiconductor material layer (210) Separate semiconductor layer (211) Graphene layer (241)