• 专利标题:   Forming graphene film used for optoelectronics, involves depositing non-gaseous carbon source on catalyst surface, and initiating conversion of non-gaseous carbon source to graphene film on catalyst surface.
  • 专利号:   WO2011112598-A1
  • 发明人:   TOUR J M, SUN Z, YAN Z
  • 专利权人:   UNIV RICE WILLIAM MARSH
  • 国际专利分类:   C01B031/02, H01B001/04, H01M004/583
  • 专利详细信息:   WO2011112598-A1 15 Sep 2011 C01B-031/02 201163 Pages: 39 English
  • 申请详细信息:   WO2011112598-A1 WOUS027575 08 Mar 2011
  • 优先权号:   US311615P, US347700P, US433702P

▎ 摘  要

NOVELTY - Method for forming a graphene film, involves (a) depositing a non-gaseous carbon source on a catalyst surface, and (b) initiating the conversion of the non-gaseous carbon source to graphene film on the catalyst surface. USE - The method is useful for forming graphene film (claimed) used for optoelectronics. ADVANTAGE - The formed film has desired thickness, size, pattern, electrical properties, low defects, low sheet resistance, ambipolar field effects, low temperature growth, patterened growth, large area growth and easy transferabiltiy. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene film, which is obtained by the above-cited method.