▎ 摘　　要

NOVELTY - The wafer comprises substrate, low-temperature nucleation layer, un-doped u-gallium nitride layer, insertion layer (4), N-type gallium nitrate layer, stress-release layer, quantum well layer, P-type electron blocking layer and P- type gallium oxide layer. The insertion layer comprises a first sub-layer (41) laminated sequentially on the substrate, an un-tetrahydro-graphene layer, a second sub layer and a third sub layer, where the first sub layer is a magnesiumxN layer grown at low temperature and high pressure. The second sublayer comprises periodically and alternately laminated high-pressure growth of the graphene nitrate and low pressure growth of AlyGa1-yN layer, and the third sublayer is an alkyl-aluminum nitrate-zN layer of high temperature growth. USE - LED epitaxial wafer for solid illumination field and display field. Uses include but are not limited to backlight source, illumination, landscape lamp. ADVANTAGE - The LED epitaxial wafer has multiple defects and reduced surface flatness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing an LED epitaxial wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an LED epitaxial wafer. 1Epitaxial layer growth substrate 2Low temperature nucleation layer 3Un-doped u-gan layer 4Insertion layer 5N-type gan layer 6Stress release layer 8P-type electronic blocking layer 9Mg-doped p-type gan layer 41First sub-layer 42Second sub-layer 43Third sub-layer 71Alternately laminated quantum well layer 72Single quantum barrier layer