▎ 摘　　要

NOVELTY - Device comprises a semiconductor, where semiconductor exhibits surface photovoltage effect, and two-dimensional material (2304) arranged over surface of the semiconductor. A drain electrode arranged on the two-dimensional material and a source electrode arranged on the two-dimensional material. An area between the drain (2308) electrode and the source electrode to be illuminated by an ultrafast infrared pulse. USE - Device used in phototransistors, spin-transistors-spincurrent filters, photodetection, and solar cells. ADVANTAGE - The device is flexible, and allowing for complex operations across an integrated wafer without intricate arrangements of gating structures. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a device and system for light-driven ultrafast electric gating. 2304Two-dimensional material 2306Band bending region 2308Drain 2312Exposed region 2314Infrared pulse