▎ 摘　　要

NOVELTY - Silicon carbide wafer is soaked in an organic solvent and ultrasonically-washed for 6-10 minutes. The resultant product is soaked in a mixed solution of hydrogen sulfide and hydrogen peroxide in molar ratio of 1:1-1:4 for 6-10 minutes and washed. The silicon carbide wafer is further soaked in 5-20% hydrofluoric acid solution for 6-10 minutes, and washed. The resultant product is dried. The dried silicon carbide sample is placed on a target table and laser having wavelength of 308-532 nm is irradiated on the silicon carbide sample, to obtain graphene. USE - Manufacture of graphene. ADVANTAGE - The method provides graphene with improved surface resistance and electroconductivity. DETAILED DESCRIPTION - Silicon carbide wafer is soaked in an organic solvent and ultrasonically-washed for 6-10 minutes. The resultant product is soaked in a mixed solution of hydrogen sulfide and hydrogen peroxide in molar ratio of 1:1-1:4 for 6-10 minutes and washed. The silicon carbide wafer is further soaked in 5-20% hydrofluoric acid solution for 6-10 minutes and washed. The resultant product is dried. The dried silicon carbide sample is placed on a target table and laser having wavelength of 308-532 nm is irradiated on the silicon carbide sample with monopulse energy density of 1.0-1.33 J/cm2, and frequency of 3-10 Hz, to obtain graphene.