▎ 摘　　要

NOVELTY - Manufacture of field effect transistor involves forming a multilayer graphene stack having predefined thickness, on a face of a base substrate, depositing a source electrode (20) and a drain electrode (30), obtaining, by fluorinating, a graphene block partially fluorinated from multilayer graphene stack and depositing a gate electrode. The graphene block partially fluorinated comprises a fluorographene portion forming a dielectric element within the graphene block. USE - Manufacture of field effect transistor. Uses include but are not limited to non-volatile memory, photodetector, chemical detector, and energy-harvesting device. ADVANTAGE - The method produces field effect transistor having excellent electrostatic properties. The transistor contains multilayer graphene stack having high quality, reduced defects between layers and excellent layer interfaces. During the process, the process of fluorinating converts lateral walls of the graphene block into fluorographene, enabling the conductive channel to be insulated from its surroundings, thus risk of shortcut of the conductive channel and the scattering of electrons at the channel edges are reduced for improving carrier mobility. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of field effect transistor. Source electrode (20) Drain electrode (30) Gate dielectric (50)