• 专利标题:   Sandwich structure material used for a device comprises intermediate layer comprising two-dimensional materials, and metal layers.
  • 专利号:   CN112725742-A
  • 发明人:   ZHOU J, WANG R, QIU X
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   C01B032/194, C23C014/16, C23C014/30, C23C014/58
  • 专利详细信息:   CN112725742-A 30 Apr 2021 C23C-014/30 202148 Pages: 11 Chinese
  • 申请详细信息:   CN112725742-A CN11030888 28 Oct 2019
  • 优先权号:   CN11030888

▎ 摘  要

NOVELTY - A sandwich structure material comprises intermediate layer and metal layers located on both sides of intermediate layer. The intermediate layer comprises two-dimensional materials. USE - The sandwich structure material is used for a device. ADVANTAGE - The material uses extremely thin material as intermediate layer. The probability of electrons penetrating the intermediate layer is extremely sensitively changed with the thickness of the layer to significantly control the thermal conductivity of the metal/interlayer/metal sandwich structure with different thicknesses of the intermediate layer. Since the probability of electrons penetrating the middle layer varies with the number of layers extremely sensitively, it can be used to realize extremely sensitive thermal conductivity control of thickness. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the sandwich structure material comprising making intermediate layer on metal layer, and making another metal layer on intermediate layer.