• 专利标题:   Fabrication method of graphene film, involves forming metal film having metal layer on substrate.
  • 专利号:   KR2012001121-A
  • 发明人:   CHOO S J, BAHNG W
  • 专利权人:   KOREA ELECTROTECHNOLOGY RES INST
  • 国际专利分类:   C23C014/06, C23C014/46, C23C014/58
  • 专利详细信息:   KR2012001121-A 04 Jan 2012 C23C-014/06 201230 Pages: 12
  • 申请详细信息:   KR2012001121-A KR061759 29 Jun 2010
  • 优先权号:   KR061759

▎ 摘  要

NOVELTY - The method involves forming metal film having metal layer (30) on substrate. Carbon film is formed on metal film using physical vapor deposition. The carbon film is annealed thermally. The metal film is made of nickel, cobalt, iron, copper, ruthenium, platinum, palladium, tantalum, molybdenum, tungsten, iridium, titanium, vanadium, manganese, zinc, aluminum and magnesium. USE - Fabrication method of graphene film. ADVANTAGE - Mass production of graphene film can be enabled at low cost. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating the fabrication process of graphene film. Metal layer (30) Carbon atom (82) Graphene film (100)