▎ 摘　　要

NOVELTY - The method involves providing a substrate (1). A graphene layer (2) is formed on a surface of the substrate. A reaction chamber is provided. The substrate is placed in the reaction chamber. A gas mixture is provided in the reaction chamber, where the gas mixture includes carbon-containing gas. Plasma is formed in the reaction chamber to cause the carbon-containing gas to react and form a set of diamond nuclei on a surface of the graphene layer. The substrate is a silicon substrate, a silicon dioxide substrate and a silicon wafer. USE - Method for forming nucleation of a diamond structure e.g. mesh-like structure and sp3 structure, on non-diamond substrates. ADVANTAGE - The method enables improving uneven distribution and penetration of diamond nuclei into groves of substrates formed by use of additional coating layers. The method enables controlling flow of a gas mixture to prevent carbon soots formation from excessive carbon-containing gas in a reaction chamber, thus improving quality of diamond nucleation. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a method for forming nucleation of a diamond structure. Substrate (1) Graphene layer (2) Diamond particles (3) Tungsten layer (5)