▎ 摘　　要

NOVELTY - The method involves providing (S1) a semiconductor substrate on which a fin and an insulating epitaxial layer covering at least the sidewalls of the fin are formed. A graphene layer is epitaxially grown (S2) on the insulating epitaxial layer to cover the insulating epitaxial layer. A chemical edge modification step is performed (S3) on the graphene layer. A hydrogenation step is performed (S4) on the graphene layer. USE - Method for manufacturing graphene FinFET device for electronic device (all claimed). ADVANTAGE - The chemical modification can reduce the disorder in the graphene nanoribbons to improve the performance of the graphene, and the effective energy gap in the correction process is not affected. The bandgap of the graphene can be adjusted by the hydrogenation. Thus, the performance of the graphene FinFET device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene FinFET device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for manufacturing graphene FinFET device. (Drawing includes non-English language text) Step for providing a semiconductor substrate (S1) Step for epitaxially growing graphene on the insulating epitaxial layer (S2) Step for performing chemical edge modification step (S3) Step for performing a hydrogenation step to the graphene (S4)