• 专利标题:   Electronic device e.g. metal oxide-Semiconductor field effect transistor, consists of graphene and carbon nanotube which are electrically connected through catalyst metal.
  • 专利号:   JP2013179177-A, JP5870758-B2
  • 发明人:   KAWABATA A
  • 专利权人:   DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO, FUJITSU LTD
  • 国际专利分类:   C01B031/02, H01L021/3205, H01L021/336, H01L021/768, H01L023/522, H01L023/532, H01L029/06, H01L029/78
  • 专利详细信息:   JP2013179177-A 09 Sep 2013 H01L-023/522 201362 Pages: 15 Japanese
  • 申请详细信息:   JP2013179177-A JP042208 28 Feb 2012
  • 优先权号:   JP042208

▎ 摘  要

NOVELTY - An electronic device consists of graphene and carbon nanotube. The graphene is formed on the carbon nanotube. The graphene and carbon nanotube are electrically connected through a catalyst metal. USE - Electronic device e.g. metal oxide-Semiconductor field effect transistor. ADVANTAGE - The electronic device having fine structures such as via and wiring with low electrical resistance and ballistic conduction, is manufactured. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of electronic device, involves forming carbon nanotube, and forming catalyst metal on carbon nanotube and graphene on catalyst metal. DESCRIPTION OF DRAWING(S) - The drawing shows schematic sectional view of manufacture of electronic device. Silicon substrate (10) Element separation structure (11) Extension region (16) Inter layer insulation film (21, 31) Wiring structure (30, 40)