▎ 摘　　要

NOVELTY - Preparation of graphene-based transistor communication materials by electrodeposition comprises determining channel region between source and drain of electrochemical transistor, adding graphene oxide solution dropwise, and drying to obtain graphene oxide modified channel region, where distance between source and drain is not over 400 m; and soaking channel region of electrochemical transistor in graphene oxide solution or precursor solution of channel material, and depositing graphene or graphene-based composite material on channel region as channel by cyclic voltammetry. USE - The method is used for preparing graphene-based transistor communication materials for electrochemical transistor sensor (claimed). ADVANTAGE - The method adopts electrodeposition of graphene oxide, chloroauric acid and graphene oxide, zirconium oxychloride and graphene oxide, and 3,4-ethylenedioxythiophene and graphene oxide to prepare graphene, metal and graphene composite, metal oxide and graphene composite, and polymer and graphene composite channel materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of graphene-based transistor.