▎ 摘　　要

NOVELTY - The graphene switching device (100) has a graphene layer (130) formed on a gate dielectric (120) formed on a gate substrate (110). A semiconductor layer (140) and a first electrode (151) are sequentially stacked on a first region of the graphene layer. The semiconductor layer is doped with an n-type impurity or a p-type impurity. The semiconductor layer faces the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. A second electrode (152) is formed on a second region of the graphene layer, the second region separated from the first region. USE - Graphene switching device with tunable barrier used as diode, triode, or transistor. ADVANTAGE - The channel width of the graphene switching device is not restricted, like in a graphene nano ribbon, since an energy gap is formed between an electrode and a graphene current path using a semiconductor barrier, thus graphene defect in a graphene patterning process is reduced or prevented. DESCRIPTION OF DRAWING(S) - The drawing is a schematic cross-sectional view of a graphene switching device including a tunable barrier. Graphene switching device (100) Gate substrate (110) Gate dielectric (120) Graphene layer (130) Semiconductor layer (140) First electrode (151) Second electrode (152)