▎ 摘　　要

NOVELTY - A graphene growing method involves providing a single crystal of silicon or a single crystal of a germanium substrate to form an epitaxial layer of silican-germanium-carbon on the substrate, followed by growing the graphene layers on the epitaxial layer by chemical vapor deposition. USE - Method for growing a graphene that is utilized in a semiconductor device. DETAILED DESCRIPTION - A graphene growing method involves providing a single crystal of silicon or a single crystal of a germanium substrate to form an epitaxial layer of silicon-germanium-carbon (Si1-xGexCy) on the substrate, followed by growing the graphene layers on the epitaxial layer by chemical vapor deposition, where the x is 0.7-1 and y is 0.002-0.05. An INDEPENDENT CLAIM is also included for a method for growing a graphene.