▎ 摘　　要

NOVELTY - The film has a graphene layer (3) and a second heteroferromagnetic layer (4) and a first heteroferromagnetic layer (2) located on the upper and lower surfaces of the graphene layer. The graphene layer is directly epitaxially grown on the first heteroferromagnetic layer, and the second heteroferromagnetic layer is epitaxially grown on the graphene layer. The insulating substrate is an aluminum trioxide substrate or a magnesium oxide substrate. USE - Ferromagnetic/graphene/ferromagnetic heteroepitaxial film. ADVANTAGE - The film ensures the epitaxial characteristics of the interfacial lattice, and can effectively avoid the problems of interfacial oxidation, impurity adsorption, and non-epitaxial, which are easy to exist in traditional preparation methods, and can achieve the high-quality preparation of the designed ferromagnetic/graphene/ferromagnetic heteroepitaxial film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method for ferromagnetic/graphene/ferromagnetic heteroepitaxial film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the structure of the nickel/graphene/nickel heteroepitaxial film. Insulating substrate (1) First heteroferromagnetic layer (2) Graphene layer (3) Second heteroferromagnetic layer (4)