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  • 专利标题:   Nitride transistor structure, has barrier layer arranged on channel layer, metal electrode module arranged on barrier layer, and gate arranged between source and drain, where carbon doping concentration of channel layer is greater than specific value.
  • 专利号:   TW717163-B1, TW202125813-A
  • 发明人:   LIN J C, KE W C, CHANG Y C, CHIANG C Y, CHANG K J, CHEN C T, LIU G S
  • 专利权人:   NAT CHUNGSHAN INST SCI TECHNOLOGY
  • 国际专利分类:   H01L029/06, H01L029/12, H01L029/66, H01L029/778
  • 专利详细信息:   TW717163-B1 21 Jan 2021 H01L-029/06 202166 Pages: 27 Chinese
  • 申请详细信息:   TW717163-B1 TW146963 20 Dec 2019
  • 优先权号:   TW146963

▎ 摘　　要

NOVELTY - The present invention is a nitride transistor structure with a graphene structure and a manufacturing method thereof. By inserting a graphene intermediate layer in the nitride transistor structure, this graphene intermediate layer can be used as a subsequent nitride epitaxial layer The carbon doping source is used to make a semi-insulating nitride epitaxial layer, and can be used as a heat conduction layer of the nitride transistor to improve the performance of the nitride transistor.