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  • 专利标题:   Preparation of three-dimensional structured graphene and carbon nanotube material used for optoelectronic device, involves preparing substrate, growing graphene on substrate, patterning, preparing catalyst and growing carbon nanotubes.
  • 专利号:   CN104036878-A, CN104036878-B
  • 发明人:   LI Z, BAI B, YANG X, DAI Q, HE F, QIU X, KONG X
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   C01B031/02, C01B031/04, H01B013/00, C01B032/162, C01B032/186
  • 专利详细信息:   CN104036878-A 10 Sep 2014 H01B-013/00 201480 Pages: 8 Chinese
  • 申请详细信息:   CN104036878-A CN10286459 24 Jun 2014
  • 优先权号:   CN10286459

▎ 摘　　要

NOVELTY - Preparation of three-dimensional structured graphene and carbon nanotube material involves preparing graphene growth substrate, growing graphene on growth substrate by chemical vapor deposition, patterning, preparing carbon nanotube growth catalyst and growing carbon nanotubes. USE - Preparation of three-dimensional structured graphene and carbon nanotube material used for integral and three-dimensional design of optoelectronic device. ADVANTAGE - The method economically enables mass production of three-dimensional structured graphene and carbon nanotube material by performing in-situ growth of graphene and carbon nanotubes.