▎ 摘　　要

NOVELTY - The method involves growing GaN-based material. The graphene solution is configured. The graphene window is defined on the surface of the GaN-based material. The graphene solution is added dropwise to the graphene window defined on the surface of the GaN-based material by spin coating or titration. The solvent is evaporated to achieve a graphene-based GaN-based device. The substrate is sapphire, silicon or silicon carbide. The GaN-based material consists of aluminum nitride, indium nitride, and ternary or multi-component alloy material. USE - Method for applying liquid graphene to gallium nitride-based materials and devices. ADVANTAGE - The size of the graphene after the transfer can be controlled, the combination of the graphene and the GaN-based material can be realized, and the performance of the GaN-based optoelectronic and microelectronic devices can be optimized and expanded. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for applying liquid graphene to gallium nitride-based materials and devices. (Drawing includes non-English language text)