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  • 专利标题:   Method for fabricating graphene-based conductive film has a steps of: providing a transparent substrate; forming a PEDOT:PSS layer on the transparent substrate.
  • 专利号:   TW201814735-A, TW625738-B1
  • 发明人:   CHEN C, HU S, TIEN L, CHEN C H, TIEN L W
  • 专利权人:   UNIV NAT SUN YAT SEN
  • 国际专利分类:   H01B013/00, H01B005/14, H01B001/04, H01B001/12, B32B009/04, B32B027/00, G06F003/041
  • 专利详细信息:   TW201814735-A 16 Apr 2018 H01B-013/00 201845 Pages: 28 Chinese
  • 申请详细信息:   TW201814735-A TW133315 14 Oct 2016
  • 优先权号:   TW133315

▎ 摘　　要

NOVELTY - A method for fabricating a graphene-based conductive film is provided and includes steps of: providing a transparent substrate; forming a PEDOT:PSS layer on the transparent substrate; and forming a reduced graphene oxide layer or a graphene deposition layer on the PEDOT:PSS layer on the PEDOT:PSS layer to fabricate the graphene-based conductive film.