• 专利标题:   Tunneling junction of perovskite/perovskite two-end laminated solar battery comprises n-type or p-type semiconductor material having electron and hole transmission capability, and tunneling composite layer based on metal oxide nanocrystals.
  • 专利号:   CN112909181-A
  • 发明人:   TAN H, WU J, XIAO K
  • 专利权人:   UNIV NANJING
  • 国际专利分类:   H01L027/30, H01L051/42, H01L051/44, H01L051/46, H01L051/48
  • 专利详细信息:   CN112909181-A 04 Jun 2021 H01L-051/46 202157 Pages: 10 Chinese
  • 申请详细信息:   CN112909181-A CN10180402 08 Feb 2021
  • 优先权号:   CN10180402

▎ 摘  要

NOVELTY - A tunneling junction of perovskite/perovskite two-end laminated solar battery comprises dense n-type or p-type semiconductor material and tunneling composite layer. The p-type or n-type semiconductor materials both have electron and hole transmission capability. The tunneling composite layer comprises perovskite/perovskite two-end laminated solar cell tunneling composite layer based on transparent conductive metal oxide nanocrystals. USE - Tunneling junction of perovskite/perovskite two-end laminated solar battery. ADVANTAGE - The battery has improved short circuit current density with excellent and solves the problem of unstable battery caused by diffusion of metal material.