▎ 摘　　要

NOVELTY - Processing growth of graphene by chemical vapor deposition on an insulating substrate by using solid carbon source comprises solid uniformly paving carbon source powder on the surface of the insulating substrate, using gas containing hydrogen as carrier gas, growing at 500-800 degrees C for 0.5-3 hours by chemical vapor deposition to obtain graphene. USE - The method is useful for processing growth of graphene by chemical vapor deposition on an insulating substrate by using solid carbon source. ADVANTAGE - The method; produces product has excellent crystallinity, does not easy to agglomerate and stack; has no polymer and surfactant residues; excellent electronic conduction efficiency and sensing performance.