▎ 摘　　要

NOVELTY - Preparation of monocrystalline graphene having crystal size of 1-4 inches and mobility of 10000 cm2V-1s-1, involves performing primary heat treatment of metal substrate in presence of carrier gas containing hydrogen, growing monocrystalline graphene on the surface of metal substrate at high-temperature using carbon source gas by catalytic cracking process, controlling concentration of hydrogen and carbon, etching, reducing density of graphene, growing graphene, etching and repeating growing and etching steps. USE - Preparation of monocrystalline graphene is used for nano-electronic device, transparent conductive film for display, solar battery electrode, gas sensor and thin film electronic device. DETAILED DESCRIPTION - Preparation of monocrystalline graphene having crystal size of 1-4 inches and mobility of 10000 cm2V-1s-1, involves performing primary heat treatment of metal substrate in presence of carrier gas containing hydrogen, growing monocrystalline graphene on the surface of metal substrate at high-temperature using carbon source gas by catalytic cracking process, controlling concentration of hydrogen and carbon, etching, reducing density of graphene, reducing the number of graphene to 1-2 per 10 square inch, adjusting the concentration of hydrogen and carbon, growing graphene, etching and repeating growing and etching steps.