▎ 摘　　要

NOVELTY - The sensor has an insulating substrate formed with a graphene alkene layer. The graphite alkene layer is divided into multiple odd graphene layers and multiple even graphene layers. A tin-germanium layer is formed on the odd graphene layers. The odd graphene layers are formed on a silicon germanium layer. The odd graphene layers are overlapped with the even graphene layers along horizontal direction. The tin-germanium layer and the silicon germanium layer are formed on an interlaced position. A metal electrode is fixed on the odd graphene layers along vertical direction. USE - Multilayer graphene photoelectric sensor. ADVANTAGE - The sensor has multilayer structure, and utilizes light irradiation so as to greatly improve sensitivity of a sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a multilayer graphene photoelectric sensor.