• 专利标题:   Graphene continuous production device has annealing system, chemical vapor-phase deposition system and graphene fast cooling system integrated in vacuum chamber.
  • 专利号:   CN102828161-A
  • 发明人:   XU Z
  • 专利权人:   XU Z
  • 国际专利分类:   C23C016/26, C23C016/54, C23C016/56
  • 专利详细信息:   CN102828161-A 19 Dec 2012 C23C-016/26 201328 Pages: 10 Chinese
  • 申请详细信息:   CN102828161-A CN10298433 21 Aug 2012
  • 优先权号:   CN10298433

▎ 摘  要

NOVELTY - Graphene continuous production device comprises heating component set on vacuum cavity (1) by use of local heating annealing and depositing. The graphene thin film is a chemical gas phase reaction of high temperature environment with substrate annealing system (3), chemical vapor-phase deposition system (4) and graphene fast cooling system (5) integrated in vacuum chamber. USE - Graphene continuous production device. ADVANTAGE - The manufacturing process saves power consumption and mass production is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the manufacturing method of graphene comprising local heating by use of graphene growth substrate or graphene film heating, replacing the heating by whole vacuum cavity mode. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene continuous production device. Vacuum cavity (1) Copper foil wire coil (2) Annealing system (3) Graphite film deposition area (4) Graphene fast cooling area (5)