• 专利标题:   Preparing multi-graphene film, by electrochemical polishing copper substrate, washing substrate using deionized water, further washing using ethanol and then drying, and performing chemical vapor deposition on substrate in growth chamber.
  • 专利号:   CN103924208-A, CN103924208-B
  • 发明人:   HAO Y, SHI Y, WANG D, ZHANG C, ZHANG J, ZHANG P
  • 专利权人:   SHI Y
  • 国际专利分类:   C01B031/04, C23C016/26
  • 专利详细信息:   CN103924208-A 16 Jul 2014 C23C-016/26 201467 Pages: 9 Chinese
  • 申请详细信息:   CN103924208-A CN10153494 17 Apr 2014
  • 优先权号:   CN10153494

▎ 摘  要

NOVELTY - The process comprises: electrochemical polishing a copper substrate for 0.5-10 minutes; washing the substrate using deionized water; further washing using ethanol for 0.1-10 minutes and then drying on a quartz tube; performing chemical vapor deposition on the substrate in a special growth chamber; growing graphene films on the substrate in a heating furnace at high temperature; and filling high purity hydrogen into the chamber at a flow rate of 5-500 standard cubic centimeters per minute (sccm), a pressure of 5-500 Pa and a temperature of 850-1075 degrees C. USE - The process is useful for preparing a multi-graphene film (claimed). ADVANTAGE - The process is capable of simply and rapidly preparing the multi-graphene film with high uniformity. DETAILED DESCRIPTION - The process comprises: electrochemical polishing a copper substrate for 0.5-10 minutes; washing the substrate using deionized water; further washing using ethanol for 0.1-10 minutes and then drying on a quartz tube; performing chemical vapor deposition on the substrate in a special growth chamber; growing graphene films on the substrate in a heating furnace at high temperature; filling high purity hydrogen into the chamber at a flow rate of 5-500 standard cubic centimeters per minute (sccm), a pressure of 5-500 Pa and a temperature of 850-1075 degrees C; further filling high purity methane into the chamber at a flow rate of 5-500 sccm, a pressure of 10-1500 Pa and a temperature of 850-1075 degrees C; opening a lid of the chamber for rapid cooling to grow multilayer graphene films; and introducing argon gas in the chamber at less than 50 degrees C. The quartz tube has a diameter of 5 mm.