• 专利标题:   Preparing Gr/silicon solar cell involves using graphite as anode, performing electrochemical reaction at constant pressure in quaternary ammonium salt/acetonitrile solution to obtain quaternary ammonium ion intercalation crystal.
  • 专利号:   CN112635620-A
  • 发明人:   MA W, WANG Q, LI S, CHEN X, WEI K, CHEN Z, LEI Y, YU J, WU J, XIE K
  • 专利权人:   UNIV KUNMING SCI TECHNOLOGY
  • 国际专利分类:   H01L031/0352, H01L031/07, H01L031/18
  • 专利详细信息:   CN112635620-A 09 Apr 2021 H01L-031/18 202138 Pages: 16 Chinese
  • 申请详细信息:   CN112635620-A CN11519084 21 Dec 2020
  • 优先权号:   CN11519084

▎ 摘  要

NOVELTY - Preparing Gr/MX2/silicon solar cell involves using graphite as anode and MX2 crystal as cathode, performing electrochemical reaction at constant pressure in quaternary ammonium salt/acetonitrile solution to obtain quaternary ammonium ion intercalation MX2 crystal. The quaternary ammonium ion intercalation MX2 crystals are ultrasonically peeled off in dimethyl formamide/polyvinylpyrrolidone solution, and washing to obtain suspension of MX2 nanosheets. The sealing is performed outside the window area of the silicon wafer to retain the oxide layer outside the window area, and then reacted in the hydrogen fluoride solution to remove the oxide layer on the window area and back of the silicon wafer. The glue is removed on the silicon wafer oxide layer, cleaned and blow dried to obtain pretreated silicon wafer. USE - Method for preparing Gr/silicon solar cell. ADVANTAGE - The method is good for improving effective separation of the photo-generated electron-hole pair. DETAILED DESCRIPTION - Preparing Gr/MX2/silicon solar cell involves using graphite as anode and MX2 crystal as cathode, performing electrochemical reaction at constant pressure in quaternary ammonium salt/acetonitrile solution to obtain quaternary ammonium ion intercalation MX2 crystal. The quaternary ammonium ion intercalation MX2 crystals are ultrasonically peeled off in dimethyl formamide/polyvinylpyrrolidone solution, and washing to obtain suspension of MX2 nanosheets. The sealing is performed outside the window area of the silicon wafer to retain the oxide layer outside the window area, and then reacted in the hydrogen fluoride solution to remove the oxide layer on the window area and back of the silicon wafer. The glue is removed on the silicon wafer oxide layer, cleaned and blow dried to obtain pretreated silicon wafer. The ultrasonic treatment of MX2 nanosheet suspension is performed, and pretreated the window area of the silicon wafer into the MX2 nanosheet suspension, and dried to obtain MX2 nanosheet film. The wet transfer method is used to transfer the sheet-layer graphene to the MX2 nanosheet film in the window area of the silicon wafer. The conductive layer is applied on the oxide layer of the silicon wafer, and applied the back electrode on the back of the silicon wafer to obtain Gr/MX2/silicon solar cell.