• 专利标题:   Preparing highly graphitized graphite thick film comprises e.g. adding nanosheet material and diamine into organic solvent, adding dianhydride to react, drying, thermally imidizing, carbonizing polyimide film and graphitizing sample.
  • 专利号:   CN113184842-A
  • 发明人:   ZHANG Y, LI S, ZHENG Z, JIANG X, CHI Z, LIU S, XU J
  • 专利权人:   UNIV SUN YATSEN
  • 国际专利分类:   C01B032/205, C04B035/52, C04B035/622
  • 专利详细信息:   CN113184842-A 30 Jul 2021 C01B-032/205 202168 Pages: 11 Chinese
  • 申请详细信息:   CN113184842-A CN10621290 03 Jun 2021
  • 优先权号:   CN10621290

▎ 摘  要

NOVELTY - Preparing highly graphitized graphite thick film comprises (ia) adding the nanosheet material and diamine into the organic solvent separately, mixing, continuously adding dianhydride to react, coating the obtained polyamic acid solution on the carrier, performing drying and thermal imidization to obtain a polyimide film doped with nanosheet material; (ib) adding nanosheet material and polyimide material into the organic solvent separately, mixing, applying the obtained polyimide glue to the carrier, and drying to obtain a polyimide film doped with nanosheet material; (iii) carbonizing the polyimide film doped with nano-sheet material; and (iv) graphitizing the carbonized sample. USE - The method is useful for preparing highly graphitized graphite thick film. ADVANTAGE - The method is simple and has broad industrialized prospects and strong practicability and does not require spraying during the preparation process and saves energy, realizes industrialized production. The film is light in weight and flexible, and increases the degree of graphitization inside the polyimide thick film, solves the problems of fragility of the finished product and incomplete graphitization inside and improves the electrical and thermal conductivity of the finished product and broadening its application range. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphite thick film prepared by above mentioned method, where the thickness of the graphite thick film is 75-150 mu m.