▎ 摘　　要

NOVELTY - Plasmon-enhanced high-sensitivity infrared detector based on two-dimensional material thin film comprises from top to bottom, photosensitive unit (1), electrical channel (2), substrate (3) and CMOS readout circuit (4). The CMOS readout circuit is engraved on substrate. The multiple photosensitive units are arranged on substrate. The electrical channel is connected between photosensitive units and CMOS readout circuit. The photosensitive unit is parallel nano-stripe array formed by etching magic-angle graphene film or graphene film material set on substrate, and top electrode (11) is connected to top of parallel nano-stripe array. The photosensitive unit is set as sandwich structure including light absorption layer, medium layer and conductive layer in order from top to bottom. The light absorption layer (12) is group of etched from magic angle graphene film or graphene film material. USE - Plasmon-enhanced high-sensitivity infrared detector based on two-dimensional material thin film ADVANTAGE - The plasmon-enhanced high-sensitivity infrared detector based on two-dimensional material thin film has small dark current, high detection rate, fast response speed and improved integration degree, satisfies detection cell, molecule, atom and material absorption and fluorescence analysis, improves material absorption efficiency, resonance absorption and wave band selectivity, and enhances absorption in the waveband of 3-18 microns. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing photosensitive unit, which involves: a. utilizing chemical vapor deposition method to obtain graphene, and preparing graphene film by spinning and soaking graphene, when photosensitive unit is parallel nano-strip array formed by magic angle graphene film or graphene film material etching or sandwich structure of light absorbing layer, dielectric layer and conductive layer; b. tearing graphene film along central axis, and superimposing each other to form magic angle graphene film after twisting angle; c. pasting graphene film or magic angle graphene film on silicon dioxide substrate by transfer stage; d. forming parallel nano-strip array through electron beam etching exposure and reactive ion process etching, or obtaining hexagonal boron nitride film as dielectric layer by mechanical peeling method, and pasting hexagonal boron nitride film on graphene film by using transfer table; e. preparing top electrode by electron beam etching exposure and electron beam evaporation process, and adhering top electrode to parallel nano-strip array, or using graphene film or magic angle graphene film as light absorption layer, and transferring to hexagonal boron nitride film through PVA glue to form sandwich sample; f. etching graphene film or magic angle graphene film of light absorbing layer to form parallel nano-strip array by electron beam etching exposure and reactive ion process etching; and g. preparing top electrode and bottom electrode by exposing by electron beam etching and electron beam evaporation, adhering top electrode to parallel nano-strip array of light absorbing layer, and adhering bottom electrode to conductive layer of graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of plasmon-enhanced high-sensitivity infrared detector based on two-dimensional material thin film 1Photosensitive unit 2Electrical channel 3Substrate 4CMOS readout circuit 11Top electrode 12Light absorption layer 13Dielectric layer 14Conductive layer 15Bottom electrode