▎ 摘　　要

NOVELTY - The preparation device has a gas supply system (4) which is connected with the growth chamber (1). The growth chamber is connected with a vacuum-pumping device (5). The growth substrate (6) of the growth chamber is wound on the coil (2) of the growth chamber. The coil is connected with the alternating current source (3). The growth substrate is made of copper, nickel or ruthenium. The core of coil is made of aluminum. USE - Preparation device of graphene. ADVANTAGE - The device with high energy utilization rate, does not need the complex and large periphery heating device, so that the structure of system is simple, and the cost is low. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation method of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the preparation device of graphene. (Drawing includes non-English language text) Growth chamber (1) Coil (2) Alternating current source (3) Gas supply system (4) Vacuum-pumping device (5) Growth substrate (6)