▎ 摘　　要

NOVELTY - Preparing pellicle (100) for extreme ultraviolet exposure with graphene defect healing layer involves forming support layer of silicon nitride material on silicon substrate (10); forming core layer of graphene material on support layer (21); providing core layer (23) in order to heal defects generated in graphene without additional damage to graphene forming core layer, and forming metal oxide on core layer by atomic layer deposition (ALD) process using heat; selectively forming material at grain boundary of core layer to heal defects of graphene forming core layer; forming capping layer (27) on graphene defect healing layer by ALD process; removing central portion of silicon substrate under support layer to form open portion through which support layer is exposed, where forming core layer includes forming small-layer graphene on support layer, forming metal catalyst layer on small-layer graphene, forming amorphous carbon layer on metal catalyst layer. USE - Method for preparing pellicle for extreme ultraviolet exposure with graphene defect healing layer. ADVANTAGE - The method for preparing pellicle with improved thermal stability, mechanical stability, and chemical durability and extreme UV transmittance of greater than or equal to 85% in ultraviolet output environment of greater than or equal to 350 Watt or more, and protects core layer from outgassing generated during extreme UV exposure. DETAILED DESCRIPTION - Preparing pellicle (100) for extreme ultraviolet exposure with graphene defect healing layer involves forming support layer of silicon nitride material on silicon substrate (10); forming core layer of graphene material on support layer (21); providing core layer (23) in order to heal defects generated in graphene without additional damage to graphene forming core layer, and forming metal oxide (MeOxNy) on core layer by atomic layer deposition (ALD) process using heat, where Me is silicon (Si), aluminum (Al), titanium (Ti), zirconium (Zr), hafnium (Hf), and x+y is 2; selectively forming material at grain boundary of core layer to heal defects of graphene forming core layer; forming capping layer (27) on graphene defect healing layer by ALD process; removing central portion of silicon substrate under support layer to form open portion through which support layer is exposed, where forming core layer includes forming small-layer graphene on support layer, forming metal catalyst layer on small-layer graphene, forming amorphous carbon layer on metal catalyst layer and by interlayer exchange between metal catalyst layer and amorphous carbon layer through heat treatment using small-layer graphene as seed layer, then carbon of amorphous carbon layer passes through metal catalyst layer and moves on small-layer graphene which is directly growing into multilayer graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of pellicle for extreme ultraviolet exposure with graphene defect healing layer. Silicon substrate (10) Support layer (21) Core layer (23) Capping layer (27) Pellicle (100)