• 专利标题:   Preparing vertical graphene material useful for capturing exosome, comprises cleaning and drying substrate by plasma-enhanced chemical vapor deposition, depositing carbon atom on substrate to form vertical graphene layer and forming chemical group on vertical graphene layer by chemical modification.
  • 专利号:   CN113929086-A
  • 发明人:   SHI L, DING X, ZHAO X, ZHONG X
  • 专利权人:   SHENZHEN YICK XIN TECHNOLOGY CO LTD
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/186, C01B032/194, C12N005/00
  • 专利详细信息:   CN113929086-A 14 Jan 2022 C01B-032/186 202238 Chinese
  • 申请详细信息:   CN113929086-A CN11236135 22 Oct 2021
  • 优先权号:   CN11236135

▎ 摘  要

NOVELTY - Preparing vertical graphene material comprises cleaning and drying the substrate by plasma-enhanced chemical vapor deposition (PECVD), depositing carbon atoms on the substrate to form a vertical graphene layer, including placing the substrate in a PECVD device, evacuating to the vacuum degree requirement, heating material and insulating, introducing certain amount of carbon source gas and buffer gas, maintaining pressure in the chamber, turning PECVD device on for plasma enhanced chemical vapor deposition, and growing vertical graphene layer to form a vertical graphene layer, stopping heating, cooling to a certain temperature and taking out, forming nanoparticle layer on the surface of the obtained vertical graphene layer by physical vapor deposition to obtain vertical graphene material, and/or forming chemical groups on the obtained vertical graphene layer through chemical modification. USE - The vertical graphene material is useful for capturing exosome (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a vertical graphene material prepared by the above method.