▎ 摘　　要

NOVELTY - Giant magnetoresistive device comprises thin film structure is formed in which non-uniform electric field locally is formed in graphene thin film layer (121) according to predetermined pattern to induced non-uniformity of charged mobility of graphene thin film layer. USE - Giant magnetoresistive device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for producing giant magnetoresistive device, which involves: (A) preparing nano island thinfilm structure having nano dot arrangement pattern of ferroelectric; and (B) preparing graphene thin film structure consisting of graphene thin film layer in which electrode is preparing and transferring graphene thin film structure in nano island thin film structure and conjugating. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of Giant magnetoresistive device. Nano island thinfilm structure (110) Graphene thin film structure (120) Graphene thin film layer (121) Electrode (122) Pinned layer (123)