• 专利标题:   Preparing graphene device by performing hydrogen fluoride-plasma-enhanced chemical vapor deposition method for preventing metal pollution, involves arranging two electrode blocks in the hot wire tube.
  • 专利号:   CN111850505-A
  • 发明人:   LIU B
  • 专利权人:   LONGYOU OUFAN NANO MATERIALS CO LTD
  • 国际专利分类:   C23C016/26, C23C016/44, C23C016/50
  • 专利详细信息:   CN111850505-A 30 Oct 2020 C23C-016/26 202000 Pages: 8 Chinese
  • 申请详细信息:   CN111850505-A CN10740154 28 Jul 2020
  • 优先权号:   CN10740154

▎ 摘  要

NOVELTY - Preparing graphene device by performing hydrogen fluoride-plasma-enhanced chemical vapor deposition (HF-PECVD) method involves arranging two electrode blocks in the hot wire tube, and connecting tungsten wires between the electrode blocks. The left end of the hot wire tube is provided with an air inlet communicating with the outside, and the body is provided with a graphene cavity on the right side of the hot wire tube. The right end of the hot wire tube communicates with the graphene cavity. The right wall of the graphene cavity is provided with an outlet communicating with the outside, and the body is provided with a processing cavity located on the right side of the graphene cavity. The left end of the processing chamber is provided with an inlet communicating with the outside. The graphene chamber is provided with a first chute extending from the right end to the processing chamber. USE - Method for preparing graphene device by performing hydrogen fluoride-plasma-enhanced chemical vapor deposition method for preventing metal pollution. ADVANTAGE - The method enables to prepared graphene device by performing hydrogen fluoride-plasma-enhanced chemical vapor deposition method, where device can automatically remove the metal pollution generated when the graphene is precipitated, and converts the pollution into tungsten iodide through iodine and finally decomposes into tungsten and attach to the tungsten wire, and the device can add different amounts of tungsten wire according to the weight of the tungsten wire. DETAILED DESCRIPTION - Preparing graphene device by performing hydrogen fluoride-plasma-enhanced chemical vapor deposition (HF-PECVD) method involves arranging two electrode blocks in the hot wire tube, and connecting tungsten wires between the electrode blocks. The left end of the hot wire tube is provided with an air inlet communicating with the outside, and the body is provided with a graphene cavity on the right side of the hot wire tube. The right end of the hot wire tube communicates with the graphene cavity. The right wall of the graphene cavity is provided with an outlet communicating with the outside, and the body is provided with a processing cavity located on the right side of the graphene cavity. The left end of the processing chamber is provided with an inlet communicating with the outside. The graphene chamber is provided with a first chute extending from the right end to the processing chamber. A heating plate is slidably provided on the first chute, the heating plate is provided with a metal substrate, and the machine body is provided with a transmission cavity located on the right side of the processing chamber. A door opening mechanism is provided in the transmission cavity, and the door opening mechanism can control the opening and closing of the outlet and the entrance. A motor is provided on the right wall of the transmission cavity. The left end of the motor shaft is power connected with a motor shaft, a first gear is fixed on the motor shaft, and a clamping mechanism is provided in the transmission cavity. The clamping mechanism can clamp the metal substrate and transported to the processing chamber, and a gear shaft is rotatably provided in the transmission chamber. A second gear meshing with the first gear is fixed on the gear shaft, and a third gear is fixed on the gear shaft. A first bevel gear is fixed on the gear shaft, a spool shaft is rotatably arranged in the transmission cavity, and a fourth gear meshing with the third gear is fixed on the spool shaft. The spool shaft is fixedly provided with a first spool, and the body is provided with a recovery cavity located on the upper side of the hot wire tube. The recovery cavity and the processing cavity are connected by a tungsten iodide tube, a first sliding groove is provided on the bottom wall of the recovery cavity, and a first magnet is slidably provided on the first sliding groove. A first pull wire is connected between the first magnet and the first wire wheel, and a first spring is connected between the first magnet and the upper wall of the recovery cavity. An extrusion tube is provided in the recovery cavity, a fixing plate is arranged in the extrusion tube, and a second spring is connected to the upper end of the fixing plate and the extrusion tube. A second magnet is provided at the lower end of the fixed plate, a second slide groove is provided in the recovery cavity, and a load block is slidably provided on the second slide groove. The body is provided with an iodine vapor chamber located on the front side of the processing chamber, and an exhaust pipe is provided between the upper end of the iodine vapor chamber and the extrusion tube. A valve is provided in the exhaust pipe, an iodine exhaust pipe is provided between the lower end of the iodine vapor cavity and the recovery cavity, and a third chute is provided in the iodine vapor cavity. A push plate is slidably provided on the third chute, and a third spring is connected between the push plate and the top wall of the iodine vapor chamber. An iodine steam pipe is arranged between the iodine steam chamber and the processing chamber, and a gas pressure valve is arranged in the iodine steam pipe and the iodine exhaust pipe.