• 专利标题:   Manufacturing method of sandwich type ultra-fast photoelectric detection metal super-structure, involves transferring second-layer graphene film to dielectric layer, and obtaining sandwich-type metal super-structure.
  • 专利号:   CN106409984-A, CN106409984-B
  • 发明人:   YAN S, ZHANG Z, ZHAO X, CUI J, XUE C, ZHANG W, WANG H, WANG J
  • 专利权人:   UNIV NORTH CHINA
  • 国际专利分类:   H01L031/09, H01L031/18
  • 专利详细信息:   CN106409984-A 15 Feb 2017 H01L-031/18 201719 Pages: 6 Chinese
  • 申请详细信息:   CN106409984-A CN11092921 02 Dec 2016
  • 优先权号:   CN11092921

▎ 摘  要

NOVELTY - The method involves adopting electron beam exposure system for exposing the negative photoresist first layer on graphene film. The metal silver is deposited in the square groove by electron-beam thermal evaporation technology. The adopting peeling craftwork is obtained by the negative photoresist removal. The overlay aligned photoresist exposure process is performed. The positive photoresist is removed through lift-off technology. The second-layer graphene film is transferred to the dielectric layer, and the sandwich-type metal super-structure is obtained. USE - Manufacturing method of sandwich type ultra-fast photoelectric detection metal super-structure. ADVANTAGE - The metal-structure is prepared in sandwich layer of noble metal-material structure. The super-fast photoelectric detection is realized effectively. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the manufacturing process of sandwich type ultra-fast photoelectric detection metal super-structure. (Drawing includes non-English language text)