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  • 专利标题:   High-stability skin touch sensor used for transistor device, comprises substrate, gate electrode, gate insulating layer, organic semiconductor layer containing flavonoids, and reduced graphene oxide, source electrode, and drain electrode.
  • 专利号:   CN111505088-A
  • 发明人:   FAN H, YANG G, ZHENG H, YU J
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   G01N027/414, H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   CN111505088-A 07 Aug 2020 G01N-027/414 202074 Pages: 9 Chinese
  • 申请详细信息:   CN111505088-A CN10292715 14 Apr 2020
  • 优先权号:   CN10292715

▎ 摘　　要

NOVELTY - A high-stability skin touch sensor comprises a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode. The organic semiconductor layer contains 1-3 %mass flavonoids, 5-7 %mass shellac, and 0.2-0.5 %mass reduced graphene oxide. USE - High-stability skin touch sensor. ADVANTAGE - The skin touch sensor has excellent stability, threshold voltage, durability, sensitivity, anti-oxidation effect, and hydrophobicity, and low mobility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of the high-stability skin touch sensor.