• 专利标题:   Light emitting device has gallium nitride layer and graphene pattern that are formed on substrate and graphene layer that is formed between gallium nitride layer and substrate.
  • 专利号:   KR2015006157-A, KR1498688-B1
  • 发明人:   HONG C H, HAN N, HAN M, RYU B D, KANG J H
  • 专利权人:   UNIV CHONBUK NAT IND COOP FOUND
  • 国际专利分类:   H01L033/20, H01L033/32
  • 专利详细信息:   KR2015006157-A 16 Jan 2015 H01L-033/32 201521 Pages: 16
  • 申请详细信息:   KR2015006157-A KR079551 08 Jul 2013
  • 优先权号:   KR079551

▎ 摘  要

NOVELTY - The light emitting device has a gallium nitride layer and a graphene pattern that are formed on a sapphire substrate. A graphene layer is formed between the gallium nitride layer and the substrate. The area of substrate which occupies graphene pattern is 60-70% of the area of the substrate which occupies graphene layer. The graphene pattern contains the graphene oxide and the graphene layer contains the graphene. USE - Light emitting device. ADVANTAGE - The property of the light emitting device is improved by forming graphene layer on the substrate. The electrode relative structure is simply implemented in graphene layer formed on the sapphire substrate and the smooth heat radiation is made possible. The light emitting device with high heat emission efficiency and improved crystalline quality is provided. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of a light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a pictorial view of the graphene pattern formed on the substrate. (Drawing includes non-English language text)