▎ 摘　　要

NOVELTY - The grain has a P-type electric conducting layer i.e. P-type aluminum indium gallium nitride layer, formed on an electric conduction base plate, an aluminum indium gallium nitride layer and a graphite layer. An electric conducting layer is formed between an N-type aluminum indium gallium nitride layer and a graphene layer. A first electrode is connected with the P-type electric conducting layer. A second electrode is electrically connected with the electric conducting layer. USE - LED crystal grain. ADVANTAGE - The grain provides better resistance rate of the graphene layer and reduces internal resistance effect of the LED crystal grain, and has better light-emitting efficiency. DETAILED DESCRIPTION - The graphene layer is a single-atom layer stacking structure or a multi-atom layer stacking structure. An INDEPENDENT CLAIM is also included for a LED crystal grain manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of an LED crystal grain.'(Drawing includes non-English language text)'