▎ 摘　　要

NOVELTY - The method involves connecting a grate electrode with a substrate. A leakage electrode is formed with a graphene oxide layer that is matched with a drain electrode. A mask pattern is removed. A cover active layer and an interlayer insulation layer are formed with the graphene oxide layer that is matched with a through hole. The interlayer insulation layer is formed with the through hole. The cover active layer is made of graphene material. The cover active layer is formed with an insulation protection layer. USE - Variable-resistance random storage device manufacturing method. ADVANTAGE - The method enables reducing processing difficulty and improving production efficiency and stability and reliability of an electric device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a variable-resistance random storage device.